Three-dimensional memory device including electrically conductive layers with molybdenum-containing liners

ABSTRACT

An alternating stack of insulating layers and sacrificial material layers is formed over a substrate. Memory stack structures are formed through the alternating stack. Each of the memory stack structures includes a memory film and a vertical semiconductor channel. Backside recesses are formed by removing the sacrificial material layers selective to the insulating layers and the memory stack structures. Electrically conductive layers are formed in the backside recesses. Each of the electrically conductive layers includes a molybdenum-containing conductive liner and a metal fill portion including a metal other than molybdenum.

FIELD

The present disclosure relates generally to the field of semiconductordevices, and particular to a three-dimensional memory device includingelectrically conductive layers with molybdenum-containing liners andmethods of manufacturing the same.

BACKGROUND

Three-dimensional vertical NAND strings having one bit per cell aredisclosed in an article by T. Endoh et al., titled “Novel Ultra HighDensity Memory With A Stacked-Surrounding Gate Transistor (S-SGT)Structured Cell”, IEDM Proc. (2001) 33-36.

SUMMARY

According to an aspect of the present disclosure, a three-dimensionalmemory device comprises an alternating stack of insulating layers andelectrically conductive layers located over a substrate, wherein each ofthe electrically conductive layers comprise a molybdenum-containingconductive liner and a metal fill portion comprising a metal other thanmolybdenum; and memory stack structures extending through thealternating stack, wherein each of the memory stack structures comprisesa memory film and a vertical semiconductor channel. Themolybdenum-containing conductive liner is located directly on a blockingdielectric layer.

According to another aspect of the present disclosure, athree-dimensional memory device comprises an alternating stack ofinsulating layers and electrically conductive layers located over asubstrate, wherein each of the electrically conductive layers comprisesa conductive liner containing molybdenum and at least one of nitrogen orcarbon, and a metal fill portion comprising a metal other thanmolybdenum, and memory stack structures extending through thealternating stack, wherein each of the memory stack structures comprisesa memory film and a vertical semiconductor channel.

According to another aspect of the present disclosure, a method offorming a three-dimensional memory device is provided, which comprises:forming an alternating stack of insulating layers and sacrificialmaterial layers over a substrate; forming memory stack structuresthrough the alternating stack, wherein each of the memory stackstructures comprises a memory film and a vertical semiconductor channel;forming backside recesses by removing the sacrificial material layersselective to the insulating layers and the memory stack structures;forming a backside blocking dielectric layer in the backside recesses;and forming electrically conductive layers in the backside recesses,wherein each of the electrically conductive layers comprise amolybdenum-containing conductive liner formed directly on the backsideblocking dielectric layer, and a metal fill portion comprising a metalother than molybdenum.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic vertical cross-sectional view of an exemplarystructure after formation of at least one peripheral device and asemiconductor material layer according to an embodiment of the presentdisclosure.

FIG. 2 is a schematic vertical cross-sectional view of the exemplarystructure after formation of an alternating stack of insulating layersand sacrificial material layers according to an embodiment of thepresent disclosure.

FIG. 3 is a schematic vertical cross-sectional view of the exemplarystructure after formation of stepped terraces and a retro-steppeddielectric material portion according to an embodiment of the presentdisclosure.

FIG. 4A is a schematic vertical cross-sectional view of the exemplarystructure after formation of memory openings and support openingsaccording to an embodiment of the present disclosure.

FIG. 4B is a top-down view of the exemplary structure of FIG. 4A. Thevertical plane A-A′ is the plane of the cross-section for FIG. 4A.

FIGS. 5A-5H are sequential schematic vertical cross-sectional views of amemory opening within the exemplary structure during formation of amemory stack structure, an optional dielectric core, and a drain regiontherein according to an embodiment of the present disclosure.

FIG. 6 is a schematic vertical cross-sectional view of the exemplarystructure after formation of memory stack structures and support pillarstructures according to an embodiment of the present disclosure.

FIG. 7A is a schematic vertical cross-sectional view of the exemplarystructure after formation of backside trenches according to anembodiment of the present disclosure.

FIG. 7B is a partial see-through top-down view of the exemplarystructure of FIG. 7A. The vertical plane A-A′ is the plane of theschematic vertical cross-sectional view of FIG. 7A.

FIG. 8 is a schematic vertical cross-sectional view of the exemplarystructure after formation of backside recesses according to anembodiment of the present disclosure.

FIGS. 9A-9D are sequential vertical cross-sectional views of a region ofthe exemplary structure during formation of electrically conductivelayers according to an embodiment of the present disclosure.

FIG. 10A is a schematic vertical cross-sectional view of the exemplarystructure at the processing step of FIG. 9D.

FIG. 10B is a magnified view of a region of the exemplary structure ofFIG. 9D.

FIG. 11A is a schematic vertical cross-sectional view of the exemplarystructure after removal of a deposited conductive material from withinthe backside trench according to an embodiment of the presentdisclosure.

FIG. 11B is a partial see-through top-down view of the exemplarystructure of FIG. 11A. The vertical plane A-A′ is the plane of theschematic vertical cross-sectional view of FIG. 11A.

FIG. 11C is a vertical cross-sectional view of the exemplary structurealong the vertical plane C-C′ of FIG. 11B.

FIG. 11D is a vertical cross-sectional view of a region of the exemplarystructure of FIGS. 11A-11C.

FIG. 12A is a schematic vertical cross-sectional view of the exemplarystructure after formation of an insulating spacer and a backside contactstructure according to an embodiment of the present disclosure.

FIG. 12B is a magnified view of a region of the exemplary structure ofFIG. 12A.

FIG. 13A is a schematic vertical cross-sectional view of the exemplarystructure after formation of additional contact via structures accordingto an embodiment of the present disclosure.

FIG. 13B is a top-down view of the exemplary structure of FIG. 13A. Thevertical plane A-A′ is the plane of the schematic verticalcross-sectional view of FIG. 13A.

FIG. 14 is a graph illustrating dependence of threshold voltage of aNAND device containing a vertical semiconductor channel as a function ofa gate bias voltage for different control gate materials according to anembodiment of the present disclosure.

DETAILED DESCRIPTION

As discussed above, the present disclosure is directed tothree-dimensional memory devices including a vertical stack ofmultilevel memory arrays and methods of making thereof, the variousaspects of which are described below. The embodiments of the disclosurecan be employed to form various structures including a multilevel memorystructure, non-limiting examples of which include semiconductor devicessuch as three-dimensional monolithic memory array devices comprising aplurality of NAND memory strings.

The drawings are not drawn to scale. Multiple instances of an elementmay be duplicated where a single instance of the element is illustrated,unless absence of duplication of elements is expressly described orclearly indicated otherwise. Ordinals such as “first,” “second,” and“third” are employed merely to identify similar elements, and differentordinals may be employed across the specification and the claims of theinstant disclosure. The same reference numerals refer to the sameelement or similar element. Unless otherwise indicated, elements havingthe same reference numerals are presumed to have the same compositionand the same function. Unless otherwise indicated, a “contact” betweenelements refers to a direct contact between elements that provides anedge or a surface shared by the elements. As used herein, a firstelement located “on” a second element can be located on the exteriorside of a surface of the second element or on the interior side of thesecond element. As used herein, a first element is located “directly on”a second element if there exist a physical contact between a surface ofthe first element and a surface of the second element. As used herein, afirst element is “electrically connected to” a second element if thereexists a conductive path consisting of at least one conductive materialbetween the first element and the second element. As used herein, a“prototype” structure or an “in-process” structure refers to a transientstructure that is subsequently modified in the shape or composition ofat least one component therein.

As used herein, a “layer” refers to a material portion including aregion having a thickness. A layer may extend over the entirety of anunderlying or overlying structure, or may have an extent less than theextent of an underlying or overlying structure. Further, a layer may bea region of a homogeneous or inhomogeneous continuous structure that hasa thickness less than the thickness of the continuous structure. Forexample, a layer may be located between any pair of horizontal planesbetween, or at, a top surface and a bottom surface of the continuousstructure. A layer may extend horizontally, vertically, and/or along atapered surface. A substrate may be a layer, may include one or morelayers therein, or may have one or more layer thereupon, thereabove,and/or therebelow.

As used herein, a first surface and a second surface are “verticallycoincident” with each other if the second surface overlies or underliesthe first surface and there exists a vertical plane or a substantiallyvertical plane that includes the first surface and the second surface. Asubstantially vertical plane is a plane that extends straight along adirection that deviates from a vertical direction by an angle less than5 degrees. A vertical plane or a substantially vertical plane isstraight along a vertical direction or a substantially verticaldirection, and may, or may not, include a curvature along a directionthat is perpendicular to the vertical direction or the substantiallyvertical direction.

A monolithic three-dimensional memory array is a memory array in whichmultiple memory levels are formed above a single substrate, such as asemiconductor wafer, with no intervening substrates. The term“monolithic” means that layers of each level of the array are directlydeposited on the layers of each underlying level of the array. Incontrast, two dimensional arrays may be formed separately and thenpackaged together to form a non-monolithic memory device. For example,non-monolithic stacked memories have been constructed by forming memorylevels on separate substrates and vertically stacking the memory levels,as described in U.S. Pat. No. 5,915,167 titled “Three-dimensionalStructure Memory.” The substrates may be thinned or removed from thememory levels before bonding, but as the memory levels are initiallyformed over separate substrates, such memories are not true monolithicthree-dimensional memory arrays. The various three-dimensional memorydevices of the present disclosure include a monolithic three-dimensionalNAND string memory device, and can be fabricated employing the variousembodiments described herein.

Generally, a semiconductor package (or a “package”) refers to a unitsemiconductor device that can be attached to a circuit board through aset of pins or solder balls. A semiconductor package may include asemiconductor chip (or a “chip”) or a plurality of semiconductor chipsthat are bonded thereamongst, for example, by flip-chip bonding oranother chip-to-chip bonding. A package or a chip may include a singlesemiconductor die (or a “die”) or a plurality of semiconductor dies. Adie is the smallest unit that can independently execute externalcommands or report status. Typically, a package or a chip with multipledies is capable of simultaneously executing as many number of externalcommands as the total number of planes therein. Each die includes one ormore planes. Identical concurrent operations can be executed in eachplane within a same die, although there may be some restrictions. Incase a die is a memory die, i.e., a die including memory elements,concurrent read operations, concurrent write operations, or concurrenterase operations can be performed in each plane within a same memorydie. In a memory die, each plane contains a number of memory blocks (or“blocks”), which are the smallest unit that can be erased by in a singleerase operation. Each memory block contains a number of pages, which arethe smallest units that can be selected for programming. A page is alsothe smallest unit that can be selected to a read operation.

Referring to FIG. 1, an exemplary structure according to an embodimentof the present disclosure is illustrated, which can be employed, forexample, to fabricate a device structure containing vertical NAND memorydevices. The exemplary structure includes a substrate (9, 10), which canbe a semiconductor substrate. The substrate can include a substratesemiconductor layer 9 and an optional semiconductor material layer 10.The substrate semiconductor layer 9 maybe a semiconductor wafer or asemiconductor material layer, and can include at least one elementalsemiconductor material (e.g., single crystal silicon wafer or layer), atleast one III-V compound semiconductor material, at least one II-VIcompound semiconductor material, at least one organic semiconductormaterial, or other semiconductor materials known in the art. Thesubstrate can have a major surface 7, which can be, for example, atopmost surface of the substrate semiconductor layer 9. The majorsurface 7 can be a semiconductor surface. In one embodiment, the majorsurface 7 can be a single crystalline semiconductor surface, such as asingle crystalline semiconductor surface.

As used herein, a “semiconducting material” refers to a material havingelectrical conductivity in the range from 1.0×10⁻⁵ S/m to 1.0×10⁵ S/m.As used herein, a “semiconductor material” refers to a material havingelectrical conductivity in the range from 1.0×10⁻⁵ S/m to 1.0 S/m in theabsence of electrical dopants therein, and is capable of producing adoped material having electrical conductivity in a range from 1.0 S/m to1.0×10⁵ S/m upon suitable doping with an electrical dopant. As usedherein, an “electrical dopant” refers to a p-type dopant that adds ahole to a valence band within a band structure, or an n-type dopant thatadds an electron to a conduction band within a band structure. As usedherein, a “conductive material” refers to a material having electricalconductivity greater than 1.0×10⁵ S/m. As used herein, an “insulatormaterial” or a “dielectric material” refers to a material havingelectrical conductivity less than 1.0×10⁻⁵ S/m. As used herein, a“heavily doped semiconductor material” refers to a semiconductormaterial that is doped with electrical dopant at a sufficiently highatomic concentration to become a conductive material either as formed asa crystalline material or if converted into a crystalline materialthrough an anneal process (for example, from an initial amorphousstate), i.e., to have electrical conductivity greater than 1.0×10⁵ S/m.A “doped semiconductor material” may be a heavily doped semiconductormaterial, or may be a semiconductor material that includes electricaldopants (i.e., p-type dopants and/or n-type dopants) at a concentrationthat provides electrical conductivity in the range from 1.0×10⁻⁵ S/m to1.0×10⁵ S/m. An “intrinsic semiconductor material” refers to asemiconductor material that is not doped with electrical dopants. Thus,a semiconductor material may be semiconducting or conductive, and may bean intrinsic semiconductor material or a doped semiconductor material. Adoped semiconductor material can be semiconducting or conductivedepending on the atomic concentration of electrical dopants therein. Asused herein, a “metallic material” refers to a conductive materialincluding at least one metallic element therein. All measurements forelectrical conductivities are made at the standard condition.

At least one semiconductor device 700 for a peripheral circuitry can beformed on a portion of the substrate semiconductor layer 9. The at leastone semiconductor device can include, for example, field effecttransistors. For example, at least one shallow trench isolationstructure 720 can be formed by etching portions of the substratesemiconductor layer 9 and depositing a dielectric material therein. Agate dielectric layer, at least one gate conductor layer, and a gate capdielectric layer can be formed over the substrate semiconductor layer 9,and can be subsequently patterned to form at least one gate structure(750, 752, 754, 758), each of which can include a gate dielectric 750, agate electrode (752, 754), and a gate cap dielectric 758. The gateelectrode (752, 754) may include a stack of a first gate electrodeportion 752 and a second gate electrode portion 754. At least one gatespacer 756 can be formed around the at least one gate structure (750,752, 754, 758) by depositing and anisotropically etching a dielectricliner. Active regions 730 can be formed in upper portions of thesubstrate semiconductor layer 9, for example, by introducing electricaldopants employing the at least one gate structure (750, 752, 754, 758)as masking structures. Additional masks may be employed as needed. Theactive region 730 can include source regions and drain regions of fieldeffect transistors. A first dielectric liner 761 and a second dielectricliner 762 can be optionally formed. Each of the first and seconddielectric liners (761, 762) can comprise a silicon oxide layer, asilicon nitride layer, and/or a dielectric metal oxide layer. As usedherein, silicon oxide includes silicon dioxide as well asnon-stoichiometric silicon oxides having more or less than two oxygenatoms for each silicon atoms. Silicon dioxide is preferred. In anillustrative example, the first dielectric liner 761 can be a siliconoxide layer, and the second dielectric liner 762 can be a siliconnitride layer. The least one semiconductor device for the peripheralcircuitry can contain a driver circuit for memory devices to besubsequently formed, which can include at least one NAND device.

A dielectric material such as silicon oxide can be deposited over the atleast one semiconductor device, and can be subsequently planarized toform a planarization dielectric layer 770. In one embodiment theplanarized top surface of the planarization dielectric layer 770 can becoplanar with a top surface of the dielectric liners (761, 762).Subsequently, the planarization dielectric layer 770 and the dielectricliners (761, 762) can be removed from an area to physically expose a topsurface of the substrate semiconductor layer 9. As used herein, asurface is “physically exposed” if the surface is in physical contactwith vacuum, or a gas phase material (such as air).

The optional semiconductor material layer 10, if present, can be formedon the top surface of the substrate semiconductor layer 9 prior to, orafter, formation of the at least one semiconductor device 700 bydeposition of a single crystalline semiconductor material, for example,by selective epitaxy. The deposited semiconductor material can be thesame as, or can be different from, the semiconductor material of thesubstrate semiconductor layer 9. The deposited semiconductor materialcan be any material that can be employed for the substrate semiconductorlayer 9 as described above. The single crystalline semiconductormaterial of the semiconductor material layer 10 can be in epitaxialalignment with the single crystalline structure of the substratesemiconductor layer 9. Portions of the deposited semiconductor materiallocated above the top surface of the planarization dielectric layer 770can be removed, for example, by chemical mechanical planarization (CMP).In this case, the semiconductor material layer 10 can have a top surfacethat is coplanar with the top surface of the planarization dielectriclayer 770.

The region (i.e., area) of the at least one semiconductor device 700 isherein referred to as a peripheral device region 200. The region inwhich a memory array is subsequently formed is herein referred to as amemory array region 100. A staircase region 300 for subsequently formingstepped terraces of electrically conductive layers can be providedbetween the memory array region 100 and the peripheral device region200.

Referring to FIG. 2, a stack of an alternating plurality of firstmaterial layers (which can be insulating layers 32) and second materiallayers (which can be sacrificial material layer 42) is formed over thetop surface of the substrate (9, 10). As used herein, a “material layer”refers to a layer including a material throughout the entirety thereof.As used herein, an alternating plurality of first elements and secondelements refers to a structure in which instances of the first elementsand instances of the second elements alternate. Each instance of thefirst elements that is not an end element of the alternating pluralityis adjoined by two instances of the second elements on both sides, andeach instance of the second elements that is not an end element of thealternating plurality is adjoined by two instances of the first elementson both ends. The first elements may have the same thicknessthereamongst, or may have different thicknesses. The second elements mayhave the same thickness thereamongst, or may have different thicknesses.The alternating plurality of first material layers and second materiallayers may begin with an instance of the first material layers or withan instance of the second material layers, and may end with an instanceof the first material layers or with an instance of the second materiallayers. In one embodiment, an instance of the first elements and aninstance of the second elements may form a unit that is repeated withperiodicity within the alternating plurality.

Each first material layer includes a first material, and each secondmaterial layer includes a second material that is different from thefirst material. In one embodiment, each first material layer can be aninsulating layer 32, and each second material layer can be a sacrificialmaterial layer. In this case, the stack can include an alternatingplurality of insulating layers 32 and sacrificial material layers 42,and constitutes a prototype stack of alternating layers comprisinginsulating layers 32 and sacrificial material layers 42.

The stack of the alternating plurality is herein referred to as analternating stack (32, 42). In one embodiment, the alternating stack(32, 42) can include insulating layers 32 composed of the firstmaterial, and sacrificial material layers 42 composed of a secondmaterial different from that of insulating layers 32. The first materialof the insulating layers 32 can be at least one insulating material. Assuch, each insulating layer 32 can be an insulating material layer.Insulating materials that can be employed for the insulating layers 32include, but are not limited to, silicon oxide (including doped orundoped silicate glass), silicon nitride, silicon oxynitride,organosilicate glass (OSG), spin-on dielectric materials, dielectricmetal oxides that are commonly known as high dielectric constant(high-k) dielectric oxides (e.g., aluminum oxide, hafnium oxide, etc.)and silicates thereof, dielectric metal oxynitrides and silicatesthereof, and organic insulating materials. In one embodiment, the firstmaterial of the insulating layers 32 can be silicon oxide.

The second material of the sacrificial material layers 42 is asacrificial material that can be removed selective to the first materialof the insulating layers 32. As used herein, a removal of a firstmaterial is “selective to” a second material if the removal processremoves the first material at a rate that is at least twice the rate ofremoval of the second material. The ratio of the rate of removal of thefirst material to the rate of removal of the second material is hereinreferred to as a “selectivity” of the removal process for the firstmaterial with respect to the second material.

The sacrificial material layers 42 may comprise an insulating material,a semiconductor material, or a conductive material. The second materialof the sacrificial material layers 42 can be subsequently replaced withelectrically conductive electrodes which can function, for example, ascontrol gate electrodes of a vertical NAND device. Non-limiting examplesof the second material include silicon nitride, an amorphoussemiconductor material (such as amorphous silicon), and apolycrystalline semiconductor material (such as polysilicon). In oneembodiment, the sacrificial material layers 42 can be spacer materiallayers that comprise silicon nitride or a semiconductor materialincluding at least one of silicon and germanium.

In one embodiment, the insulating layers 32 can include silicon oxide,and sacrificial material layers can include silicon nitride sacrificialmaterial layers. The first material of the insulating layers 32 can bedeposited, for example, by chemical vapor deposition (CVD). For example,if silicon oxide is employed for the insulating layers 32, tetraethylorthosilicate (TEOS) can be employed as the precursor material for theCVD process. The second material of the sacrificial material layers 42can be formed, for example, CVD or atomic layer deposition (ALD).

The sacrificial material layers 42 can be suitably patterned so thatconductive material portions to be subsequently formed by replacement ofthe sacrificial material layers 42 can function as electricallyconductive electrodes, such as the control gate electrodes of themonolithic three-dimensional NAND string memory devices to besubsequently formed. The sacrificial material layers 42 may comprise aportion having a strip shape extending substantially parallel to themajor surface 7 of the substrate.

The thicknesses of the insulating layers 32 and the sacrificial materiallayers 42 can be in a range from 20 nm to 50 nm, although lesser andgreater thicknesses can be employed for each insulating layer 32 and foreach sacrificial material layer 42. The number of repetitions of thepairs of an insulating layer 32 and a sacrificial material layer (e.g.,a control gate electrode or a sacrificial material layer) 42 can be in arange from 2 to 1,024, and typically from 8 to 256, although a greaternumber of repetitions can also be employed. The top and bottom gateelectrodes in the stack may function as the select gate electrodes. Inone embodiment, each sacrificial material layer 42 in the alternatingstack (32, 42) can have a uniform thickness that is substantiallyinvariant within each respective sacrificial material layer 42.

While the present disclosure is described employing an embodiment inwhich the spacer material layers are sacrificial material layers 42 thatare subsequently replaced with electrically conductive layers,embodiments are expressly contemplated herein in which the sacrificialmaterial layers are formed as electrically conductive layers. In thiscase, steps for replacing the spacer material layers with electricallyconductive layers can be omitted.

Optionally, an insulating cap layer 70 can be formed over thealternating stack (32, 42). The insulating cap layer 70 includes adielectric material that is different from the material of thesacrificial material layers 42. In one embodiment, the insulating caplayer 70 can include a dielectric material that can be employed for theinsulating layers 32 as described above. The insulating cap layer 70 canhave a greater thickness than each of the insulating layers 32. Theinsulating cap layer 70 can be deposited, for example, by chemical vapordeposition. In one embodiment, the insulating cap layer 70 can be asilicon oxide layer.

Referring to FIG. 3, stepped surfaces are formed at a peripheral regionof the alternating stack (32, 42), which is herein referred to as aterrace region. As used herein, “stepped surfaces” refer to a set ofsurfaces that include at least two horizontal surfaces and at least twovertical surfaces such that each horizontal surface is adjoined to afirst vertical surface that extends upward from a first edge of thehorizontal surface, and is adjoined to a second vertical surface thatextends downward from a second edge of the horizontal surface. A steppedcavity is formed within the volume from which portions of thealternating stack (32, 42) are removed through formation of the steppedsurfaces. A “stepped cavity” refers to a cavity having stepped surfaces.

The terrace region is formed in the staircase region 300, which islocated between the memory array region 100 and the peripheral deviceregion 200 containing the at least one semiconductor device for theperipheral circuitry. The stepped cavity can have various steppedsurfaces such that the horizontal cross-sectional shape of the steppedcavity changes in steps as a function of the vertical distance from thetop surface of the substrate (9, 10). In one embodiment, the steppedcavity can be formed by repetitively performing a set of processingsteps. The set of processing steps can include, for example, an etchprocess of a first type that vertically increases the depth of a cavityby one or more levels, and an etch process of a second type thatlaterally expands the area to be vertically etched in a subsequent etchprocess of the first type. As used herein, a “level” of a structureincluding alternating plurality is defined as the relative position of apair of a first material layer and a second material layer within thestructure.

Each sacrificial material layer 42 other than a topmost sacrificialmaterial layer 42 within the alternating stack (32, 42) laterallyextends farther than any overlying sacrificial material layer 42 withinthe alternating stack (32, 42) in the terrace region. The terrace regionincludes stepped surfaces of the alternating stack (32, 42) thatcontinuously extend from a bottommost layer within the alternating stack(32, 42) to a topmost layer within the alternating stack (32, 42).

Each vertical step of the stepped surfaces can have the height of one ormore pairs of an insulating layer 32 and a sacrificial material layer.In one embodiment, each vertical step can have the height of a singlepair of an insulating layer 32 and a sacrificial material layer 42. Inanother embodiment, multiple “columns” of staircases can be formed alonga first horizontal direction hd1 such that each vertical step has theheight of a plurality of pairs of an insulating layer 32 and asacrificial material layer 42, and the number of columns can be at leastthe number of the plurality of pairs. Each column of staircase can bevertically offset among one another such that each of the sacrificialmaterial layers 42 has a physically exposed top surface in a respectivecolumn of staircases. In the illustrative example, two columns ofstaircases are formed for each block of memory stack structures to besubsequently formed such that one column of staircases providephysically exposed top surfaces for odd-numbered sacrificial materiallayers 42 (as counted from the bottom) and another column of staircasesprovide physically exposed top surfaces for even-numbered sacrificialmaterial layers (as counted from the bottom). Configurations employingthree, four, or more columns of staircases with a respective set ofvertical offsets among the physically exposed surfaces of thesacrificial material layers 42 may also be employed. Each sacrificialmaterial layer 42 has a greater lateral extent, at least along onedirection, than any overlying sacrificial material layers 42 such thateach physically exposed surface of any sacrificial material layer 42does not have an overhang. In one embodiment, the vertical steps withineach column of staircases may be arranged along the first horizontaldirection hd1, and the columns of staircases may be arranged along asecond horizontal direction hd2 that is perpendicular to the firsthorizontal direction hd1. In one embodiment, the first horizontaldirection hd1 may be perpendicular to the boundary between the memoryarray region 100 and the staircase region 300.

A retro-stepped dielectric material portion 65 (i.e., an insulating fillmaterial portion) can be formed in the stepped cavity by deposition of adielectric material therein. For example, a dielectric material such assilicon oxide can be deposited in the stepped cavity. Excess portions ofthe deposited dielectric material can be removed from above the topsurface of the insulating cap layer 70, for example, by chemicalmechanical planarization (CMP). The remaining portion of the depositeddielectric material filling the stepped cavity constitutes theretro-stepped dielectric material portion 65. As used herein, a“retro-stepped” element refers to an element that has stepped surfacesand a horizontal cross-sectional area that increases monotonically as afunction of a vertical distance from a top surface of a substrate onwhich the element is present. If silicon oxide is employed for theretro-stepped dielectric material portion 65, the silicon oxide of theretro-stepped dielectric material portion 65 may, or may not, be dopedwith dopants such as B, P, and/or F.

Optionally, drain select level isolation structures 72 can be formedthrough the insulating cap layer 70 and a subset of the sacrificialmaterial layers 42 located at drain select levels. The drain selectlevel isolation structures 72 can be formed, for example, by formingdrain select level isolation trenches and filling the drain select levelisolation trenches with a dielectric material such as silicon oxide.Excess portions of the dielectric material can be removed from above thetop surface of the insulating cap layer 70.

Referring to FIGS. 4A and 4B, a lithographic material stack (not shown)including at least a photoresist layer can be formed over the insulatingcap layer 70 and the retro-stepped dielectric material portion 65, andcan be lithographically patterned to form openings therein. The openingsinclude a first set of openings formed over the memory array region 100and a second set of openings formed over the staircase region 300. Thepattern in the lithographic material stack can be transferred throughthe insulating cap layer 70 or the retro-stepped dielectric materialportion 65, and through the alternating stack (32, 42) by at least oneanisotropic etch that employs the patterned lithographic material stackas an etch mask. Portions of the alternating stack (32, 42) underlyingthe openings in the patterned lithographic material stack are etched toform memory openings 49 and support openings 19. As used herein, a“memory opening” refers to a structure in which memory elements, such asa memory stack structure, is subsequently formed. As used herein, a“support opening” refers to a structure in which a support structure(such as a support pillar structure) that mechanically supports otherelements is subsequently formed. The memory openings 49 are formedthrough the insulating cap layer 70 and the entirety of the alternatingstack (32, 42) in the memory array region 100. The support openings 19are formed through the retro-stepped dielectric material portion 65 andthe portion of the alternating stack (32, 42) that underlie the steppedsurfaces in the staircase region 300.

The memory openings 49 extend through the entirety of the alternatingstack (32, 42). The support openings 19 extend through a subset oflayers within the alternating stack (32, 42). The chemistry of theanisotropic etch process employed to etch through the materials of thealternating stack (32, 42) can alternate to optimize etching of thefirst and second materials in the alternating stack (32, 42). Theanisotropic etch can be, for example, a series of reactive ion etches.The sidewalls of the memory openings 49 and the support openings 19 canbe substantially vertical, or can be tapered. The patterned lithographicmaterial stack can be subsequently removed, for example, by ashing.

The memory openings 49 and the support openings 19 can extend from thetop surface of the alternating stack (32, 42) to at least the horizontalplane including the topmost surface of the semiconductor material layer10. In one embodiment, an overetch into the semiconductor material layer10 may be optionally performed after the top surface of thesemiconductor material layer 10 is physically exposed at a bottom ofeach memory opening 49 and each support opening 19. The overetch may beperformed prior to, or after, removal of the lithographic materialstack. In other words, the recessed surfaces of the semiconductormaterial layer 10 may be vertically offset from the un-recessed topsurfaces of the semiconductor material layer 10 by a recess depth. Therecess depth can be, for example, in a range from 1 nm to 50 nm,although lesser and greater recess depths can also be employed. Theoveretch is optional, and may be omitted. If the overetch is notperformed, the bottom surfaces of the memory openings 49 and the supportopenings 19 can be coplanar with the topmost surface of thesemiconductor material layer 10.

Each of the memory openings 49 and the support openings 19 may include asidewall (or a plurality of sidewalls) that extends substantiallyperpendicular to the topmost surface of the substrate. A two-dimensionalarray of memory openings 49 can be formed in the memory array region100. A two-dimensional array of support openings 19 can be formed in thestaircase region 300. The substrate semiconductor layer 9 and thesemiconductor material layer 10 collectively constitutes a substrate (9,10), which can be a semiconductor substrate. Alternatively, thesemiconductor material layer 10 may be omitted, and the memory openings49 and the support openings 19 can be extend to a top surface of thesubstrate semiconductor layer 9.

FIGS. 5A-5H illustrate structural changes in a memory opening 49, whichis one of the memory openings 49 in the exemplary structure of FIGS. 4Aand 4B. The same structural change occurs simultaneously in each of theother memory openings 49 and in each of the support openings 19.

Referring to FIG. 5A, a memory opening 49 in the exemplary devicestructure of FIGS. 4A and 4B is illustrated. The memory opening 49extends through the insulating cap layer 70, the alternating stack (32,42), and optionally into an upper portion of the semiconductor materiallayer 10. At this processing step, each support opening 19 can extendthrough the retro-stepped dielectric material portion 65, a subset oflayers in the alternating stack (32, 42), and optionally through theupper portion of the semiconductor material layer 10. The recess depthof the bottom surface of each memory opening with respect to the topsurface of the semiconductor material layer 10 can be in a range from 0nm to 30 nm, although greater recess depths can also be employed.Optionally, the sacrificial material layers 42 can be laterally recessedpartially to form lateral recesses (not shown), for example, by anisotropic etch.

Referring to FIG. 5B, an optional pedestal channel portion (e.g., anepitaxial pedestal) 11 can be formed at the bottom portion of eachmemory opening 49 and each support openings 19, for example, byselective epitaxy. Each pedestal channel portion 11 comprises a singlecrystalline semiconductor material in epitaxial alignment with thesingle crystalline semiconductor material of the semiconductor materiallayer 10. In one embodiment, the top surface of each pedestal channelportion 11 can be formed above a horizontal plane including the topsurface of a bottommost sacrificial material layer 42. In this case, asource select gate electrode can be subsequently formed by replacing thebottommost sacrificial material layer 42 with a conductive materiallayer. The pedestal channel portion 11 can be a portion of a transistorchannel that extends between a source region to be subsequently formedin the substrate (9, 10) and a drain region to be subsequently formed inan upper portion of the memory opening 49. A memory cavity 49′ ispresent in the unfilled portion of the memory opening 49 above thepedestal channel portion 11. In one embodiment, the pedestal channelportion 11 can comprise single crystalline silicon. In one embodiment,the pedestal channel portion 11 can have a doping of the firstconductivity type, which is the same as the conductivity type of thesemiconductor material layer 10 that the pedestal channel portioncontacts. If a semiconductor material layer 10 is not present, thepedestal channel portion 11 can be formed directly on the substratesemiconductor layer 9, which can have a doping of the first conductivitytype.

Referring to FIG. 5C, a stack of layers including a blocking dielectriclayer 52, a charge storage layer 54, a tunneling dielectric layer 56,and an optional first semiconductor channel layer 601 can besequentially deposited in the memory openings 49.

The blocking dielectric layer 52 can include a single dielectricmaterial layer or a stack of a plurality of dielectric material layers.In one embodiment, the blocking dielectric layer can include adielectric metal oxide layer consisting essentially of a dielectricmetal oxide. As used herein, a dielectric metal oxide refers to adielectric material that includes at least one metallic element and atleast oxygen. The dielectric metal oxide may consist essentially of theat least one metallic element and oxygen, or may consist essentially ofthe at least one metallic element, oxygen, and at least one non-metallicelement such as nitrogen. In one embodiment, the blocking dielectriclayer 52 can include a dielectric metal oxide having a dielectricconstant greater than 7.9, i.e., having a dielectric constant greaterthan the dielectric constant of silicon nitride.

Non-limiting examples of dielectric metal oxides include aluminum oxide(Al₂O₃), hafnium oxide (HfO₂), lanthanum oxide (LaO₂), yttrium oxide(Y₂O₃), tantalum oxide (Ta₂O₅), silicates thereof, nitrogen-dopedcompounds thereof, alloys thereof, and stacks thereof. The dielectricmetal oxide layer can be deposited, for example, by chemical vapordeposition (CVD), atomic layer deposition (ALD), pulsed laser deposition(PLD), liquid source misted chemical deposition, or a combinationthereof. The thickness of the dielectric metal oxide layer can be in arange from 1 nm to 20 nm, although lesser and greater thicknesses canalso be employed. The dielectric metal oxide layer can subsequentlyfunction as a dielectric material portion that blocks leakage of storedelectrical charges to control gate electrodes. In one embodiment, theblocking dielectric layer 52 includes aluminum oxide. In one embodiment,the blocking dielectric layer 52 can include multiple dielectric metaloxide layers having different material compositions.

Alternatively or additionally, the blocking dielectric layer 52 caninclude a dielectric semiconductor compound such as silicon oxide,silicon oxynitride, silicon nitride, or a combination thereof. In oneembodiment, the blocking dielectric layer 52 can include silicon oxide.In this case, the dielectric semiconductor compound of the blockingdielectric layer 52 can be formed by a conformal deposition method suchas low pressure chemical vapor deposition, atomic layer deposition, or acombination thereof. The thickness of the dielectric semiconductorcompound can be in a range from 1 nm to 20 nm, although lesser andgreater thicknesses can also be employed. Alternatively, the blockingdielectric layer 52 can be omitted, and a backside blocking dielectriclayer can be formed after formation of backside recesses on surfaces ofmemory films to be subsequently formed.

Subsequently, the charge storage layer 54 can be formed. In oneembodiment, the charge storage layer 54 can be a continuous layer orpatterned discrete portions of a charge trapping material including adielectric charge trapping material, which can be, for example, siliconnitride. Alternatively, the charge storage layer 54 can include acontinuous layer or patterned discrete portions of a conductive materialsuch as doped polysilicon or a metallic material that is patterned intomultiple electrically isolated portions (e.g., floating gates), forexample, by being formed within lateral recesses into sacrificialmaterial layers 42. In one embodiment, the charge storage layer 54includes a silicon nitride layer. In one embodiment, the sacrificialmaterial layers 42 and the insulating layers 32 can have verticallycoincident sidewalls, and the charge storage layer 54 can be formed as asingle continuous layer.

In another embodiment, the sacrificial material layers 42 can belaterally recessed with respect to the sidewalls of the insulatinglayers 32, and a combination of a deposition process and an anisotropicetch process can be employed to form the charge storage layer 54 as aplurality of memory material portions that are vertically spaced apart.While the present disclosure is described employing an embodiment inwhich the charge storage layer 54 is a single continuous layer,embodiments are expressly contemplated herein in which the chargestorage layer 54 is replaced with a plurality of memory materialportions (which can be charge trapping material portions or electricallyisolated conductive material portions) that are vertically spaced apart.

The charge storage layer 54 can be formed as a single charge storagelayer of homogeneous composition, or can include a stack of multiplecharge storage layers. The multiple charge storage layers, if employed,can comprise a plurality of spaced-apart floating gate material layersthat contain conductive materials (e.g., metal such as tungsten,molybdenum, tantalum, titanium, platinum, ruthenium, and alloys thereof,or a metal silicide such as tungsten silicide, molybdenum silicide,tantalum silicide, titanium silicide, nickel silicide, cobalt silicide,or a combination thereof) and/or semiconductor materials (e.g.,polycrystalline or amorphous semiconductor material including at leastone elemental semiconductor element or at least one compoundsemiconductor material). Alternatively or additionally, the chargestorage layer 54 may comprise an insulating charge trapping material,such as one or more silicon nitride segments. Alternatively, the chargestorage layer 54 may comprise conductive nanoparticles such as metalnanoparticles, which can be, for example, ruthenium nanoparticles. Thecharge storage layer 54 can be formed, for example, by chemical vapordeposition (CVD), atomic layer deposition (ALD), physical vapordeposition (PVD), or any suitable deposition technique for storingelectrical charges therein. The thickness of the charge storage layer 54can be in a range from 2 nm to 20 nm, although lesser and greaterthicknesses can also be employed.

The tunneling dielectric layer 56 includes a dielectric material throughwhich charge tunneling can be performed under suitable electrical biasconditions. The charge tunneling may be performed through hot-carrierinjection or by Fowler-Nordheim tunneling induced charge transferdepending on the mode of operation of the monolithic three-dimensionalNAND string memory device to be formed. The tunneling dielectric layer56 can include silicon oxide, silicon nitride, silicon oxynitride,dielectric metal oxides (such as aluminum oxide and hafnium oxide),dielectric metal oxynitride, dielectric metal silicates, alloys thereof,and/or combinations thereof. In one embodiment, the tunneling dielectriclayer 56 can include a stack of a first silicon oxide layer, a siliconoxynitride layer, and a second silicon oxide layer, which is commonlyknown as an ONO stack. In one embodiment, the tunneling dielectric layer56 can include a silicon oxide layer that is substantially free ofcarbon or a silicon oxynitride layer that is substantially free ofcarbon. The thickness of the tunneling dielectric layer 56 can be in arange from 2 nm to 20 nm, although lesser and greater thicknesses canalso be employed.

The optional first semiconductor channel layer 601 includes asemiconductor material such as at least one elemental semiconductormaterial, at least one III-V compound semiconductor material, at leastone II-VI compound semiconductor material, at least one organicsemiconductor material, or other semiconductor materials known in theart. In one embodiment, the first semiconductor channel layer 601includes amorphous silicon or polysilicon. The first semiconductorchannel layer 601 can be formed by a conformal deposition method such aslow pressure chemical vapor deposition (LPCVD). The thickness of thefirst semiconductor channel layer 601 can be in a range from 2 nm to 10nm, although lesser and greater thicknesses can also be employed. Amemory cavity 49′ is formed in the volume of each memory opening 49 thatis not filled with the deposited material layers (52, 54, 56, 601).

Referring to FIG. 5D, the optional first semiconductor channel layer601, the tunneling dielectric layer 56, the charge storage layer 54, andthe blocking dielectric layer 52 are sequentially anisotropically etchedemploying at least one anisotropic etch process. The portions of thefirst semiconductor channel layer 601, the tunneling dielectric layer56, the charge storage layer 54, and the blocking dielectric layer 52located above the top surface of the insulating cap layer 70 can beremoved by the at least one anisotropic etch process. Further, thehorizontal portions of the first semiconductor channel layer 601, thetunneling dielectric layer 56, the charge storage layer 54, and theblocking dielectric layer 52 at a bottom of each memory cavity 49′ canbe removed to form openings in remaining portions thereof. Each of thefirst semiconductor channel layer 601, the tunneling dielectric layer56, the charge storage layer 54, and the blocking dielectric layer 52can be etched by a respective anisotropic etch process employing arespective etch chemistry, which may, or may not, be the same for thevarious material layers.

Each remaining portion of the first semiconductor channel layer 601 canhave a tubular configuration. The charge storage layer 54 can comprise acharge trapping material or a floating gate material. In one embodiment,each charge storage layer 54 can include a vertical stack of chargestorage regions that store electrical charges upon programming. In oneembodiment, the charge storage layer 54 can be a charge storage layer inwhich each portion adjacent to the sacrificial material layers 42constitutes a charge storage region.

A surface of the pedestal channel portion 11 (or a surface of thesemiconductor material layer 10 in case the pedestal channel portions 11are not employed) can be physically exposed underneath the openingthrough the first semiconductor channel layer 601, the tunnelingdielectric layer 56, the charge storage layer 54, and the blockingdielectric layer 52. Optionally, the physically exposed semiconductorsurface at the bottom of each memory cavity 49′ can be verticallyrecessed so that the recessed semiconductor surface underneath thememory cavity 49′ is vertically offset from the topmost surface of thepedestal channel portion 11 (or of the semiconductor material layer 10in case pedestal channel portions 11 are not employed) by a recessdistance. A tunneling dielectric layer 56 is located over the chargestorage layer 54. A set of a blocking dielectric layer 52, a chargestorage layer 54, and a tunneling dielectric layer 56 in a memoryopening 49 constitutes a memory film 50, which includes a plurality ofcharge storage regions (as embodied as the charge storage layer 54) thatare insulated from surrounding materials by the blocking dielectriclayer 52 and the tunneling dielectric layer 56. In one embodiment, thefirst semiconductor channel layer 601, the tunneling dielectric layer56, the charge storage layer 54, and the blocking dielectric layer 52can have vertically coincident sidewalls.

Referring to FIG. 5E, a second semiconductor channel layer 602 can bedeposited directly on the semiconductor surface of the pedestal channelportion 11 or the semiconductor material layer 10 if the pedestalchannel portion 11 is omitted, and directly on the first semiconductorchannel layer 601. The second semiconductor channel layer 602 includes asemiconductor material such as at least one elemental semiconductormaterial, at least one III-V compound semiconductor material, at leastone II-VI compound semiconductor material, at least one organicsemiconductor material, or other semiconductor materials known in theart. In one embodiment, the second semiconductor channel layer 602includes amorphous silicon or polysilicon. The second semiconductorchannel layer 602 can be formed by a conformal deposition method such aslow pressure chemical vapor deposition (LPCVD). The thickness of thesecond semiconductor channel layer 602 can be in a range from 2 nm to 10nm, although lesser and greater thicknesses can also be employed. Thesecond semiconductor channel layer 602 may partially fill the memorycavity 49′ in each memory opening, or may fully fill the cavity in eachmemory opening.

The materials of the first semiconductor channel layer 601 and thesecond semiconductor channel layer 602 are collectively referred to as asemiconductor channel material. In other words, the semiconductorchannel material is a set of all semiconductor material in the firstsemiconductor channel layer 601 and the second semiconductor channellayer 602.

Referring to FIG. 5F, in case the memory cavity 49′ in each memoryopening is not completely filled by the second semiconductor channellayer 602, a dielectric core layer 62L can be deposited in the memorycavity 49′ to fill any remaining portion of the memory cavity 49′ withineach memory opening. The dielectric core layer 62L includes a dielectricmaterial such as silicon oxide or organosilicate glass. The dielectriccore layer 62L can be deposited by a conformal deposition method such aslow pressure chemical vapor deposition (LPCVD), or by a self-planarizingdeposition process such as spin coating.

Referring to FIG. 5G, the horizontal portion of the dielectric corelayer 62L can be removed, for example, by a recess etch from above thetop surface of the insulating cap layer 70. Each remaining portion ofthe dielectric core layer 62L constitutes a dielectric core 62. Further,the horizontal portion of the second semiconductor channel layer 602located above the top surface of the insulating cap layer 70 can beremoved by a planarization process, which can employ a recess etch orchemical mechanical planarization (CMP). Each remaining portion of thesecond semiconductor channel layer 602 can be located entirety within amemory opening 49 or entirely within a support opening 19.

Each adjoining pair of a first semiconductor channel layer 601 and asecond semiconductor channel layer 602 can collectively form a verticalsemiconductor channel 60 through which electrical current can flow whena vertical NAND device including the vertical semiconductor channel 60is turned on. A tunneling dielectric layer 56 is surrounded by a chargestorage layer 54, and laterally surrounds a portion of the verticalsemiconductor channel 60. Each adjoining set of a blocking dielectriclayer 52, a charge storage layer 54, and a tunneling dielectric layer 56collectively constitute a memory film 50, which can store electricalcharges with a macroscopic retention time. In some embodiments, ablocking dielectric layer 52 may not be present in the memory film 50 atthis step, and a blocking dielectric layer may be subsequently formedafter formation of backside recesses. As used herein, a macroscopicretention time refers to a retention time suitable for operation of amemory device as a permanent memory device such as a retention time inexcess of 24 hours.

Referring to FIG. 5H, the top surface of each dielectric core 62 can befurther recessed within each memory opening, for example, by a recessetch to a depth that is located between the top surface of theinsulating cap layer 70 and the bottom surface of the insulating caplayer 70. Drain regions 63 can be formed by depositing a dopedsemiconductor material within each recessed region above the dielectriccores 62. The drain regions 63 can have a doping of a secondconductivity type that is the opposite of the first conductivity type.For example, if the first conductivity type is p-type, the secondconductivity type is n-type, and vice versa. The dopant concentration inthe drain regions 63 can be in a range from 5.0×10¹⁹/cm³ to2.0×10²¹/cm³, although lesser and greater dopant concentrations can alsobe employed. The doped semiconductor material can be, for example, dopedpolysilicon. Excess portions of the deposited semiconductor material canbe removed from above the top surface of the insulating cap layer 70,for example, by chemical mechanical planarization (CMP) or a recess etchto form the drain regions 63.

Each combination of a memory film 50 and a vertical semiconductorchannel 60 within a memory opening 49 constitutes a memory stackstructure 55. The memory stack structure 55 is a combination of asemiconductor channel, a tunneling dielectric layer, a plurality ofmemory elements as embodied as portions of the charge storage layer 54,and an optional blocking dielectric layer 52. Each combination of apedestal channel portion 11 (if present), a memory stack structure 55, adielectric core 62, and a drain region 63 within a memory opening 49 isherein referred to as a memory opening fill structure 58. Eachcombination of a pedestal channel portion 11 (if present), a memory film50, a vertical semiconductor channel 60, a dielectric core 62, and adrain region 63 within each support opening 19 fills the respectivesupport openings 19, and constitutes a support pillar structure.

Referring to FIG. 6, the exemplary structure is illustrated afterformation of memory opening fill structures 58 and support pillarstructure 20 within the memory openings 49 and the support openings 19,respectively. An instance of a memory opening fill structure 58 can beformed within each memory opening 49 of the structure of FIGS. 4A and4B. An instance of the support pillar structure 20 can be formed withineach support opening 19 of the structure of FIGS. 4A and 4B.

Each memory stack structure 55 includes a vertical semiconductor channel60, which may comprise multiple semiconductor channel layers (601, 602),and a memory film 50. The memory film 50 may comprise a tunnelingdielectric layer 56 laterally surrounding the vertical semiconductorchannel 60, a vertical stack of charge storage regions (as embodied as acharge storage layer 54) laterally surrounding the tunneling dielectriclayer 56, and an optional blocking dielectric layer 52. While thepresent disclosure is described employing the illustrated configurationfor the memory stack structure, the methods of the present disclosurecan be applied to alternative memory stack structures includingdifferent layer stacks or structures for the memory film 50 and/or forthe vertical semiconductor channel 60.

Referring to FIGS. 7A and 7B, a contact level dielectric layer 73 can beformed over the alternating stack (32, 42) of insulating layer 32 andsacrificial material layers 42, and over the memory stack structures 55and the support pillar structures 20. The contact level dielectric layer73 includes a dielectric material that is different from the dielectricmaterial of the sacrificial material layers 42. For example, the contactlevel dielectric layer 73 can include silicon oxide. The contact leveldielectric layer 73 can have a thickness in a range from 50 nm to 500nm, although lesser and greater thicknesses can also be employed.

A photoresist layer (not shown) can be applied over the contact leveldielectric layer 73, and is lithographically patterned to form openingsin areas between clusters of memory stack structures 55. The pattern inthe photoresist layer can be transferred through the contact leveldielectric layer 73, the alternating stack (32, 42) and/or theretro-stepped dielectric material portion 65 employing an anisotropicetch to form backside trenches 79, which vertically extend from the topsurface of the contact level dielectric layer 73 at least to the topsurface of the substrate (9, 10), and laterally extend through thememory array region 100 and the staircase region 300.

In one embodiment, the backside trenches 79 can laterally extend along afirst horizontal direction hd1 and can be laterally spaced apart amongone another along a second horizontal direction hd2 that isperpendicular to the first horizontal direction hd1. The memory stackstructures 55 can be arranged in rows that extend along the firsthorizontal direction hd1. The drain select level isolation structures 72can laterally extend along the first horizontal direction hd1. Eachbackside trench 79 can have a uniform width that is invariant along thelengthwise direction (i.e., along the first horizontal direction hd1).Each drain select level isolation structure 72 can have a uniformvertical cross-sectional profile along vertical planes that areperpendicular to the first horizontal direction hd1 that is invariantwith translation along the first horizontal direction hd1. Multiple rowsof memory stack structures 55 can be located between a neighboring pairof a backside trench 79 and a drain select level isolation structure 72,or between a neighboring pair of drain select level isolation structures72. In one embodiment, the backside trenches 79 can include a sourcecontact opening in which a source contact via structure can besubsequently formed. The photoresist layer can be removed, for example,by ashing.

Referring to FIGS. 8 and 9A, an etchant that selectively etches thesecond material of the sacrificial material layers 42 with respect tothe first material of the insulating layers 32 can be introduced intothe backside trenches 79, for example, employing an etch process. FIG.9A illustrates a region of the exemplary structure of FIG. 8. Backsiderecesses 43 are formed in volumes from which the sacrificial materiallayers 42 are removed. The removal of the second material of thesacrificial material layers 42 can be selective to the first material ofthe insulating layers 32, the material of the retro-stepped dielectricmaterial portion 65, the semiconductor material of the semiconductormaterial layer 10, and the material of the outermost layer of the memoryfilms 50. In one embodiment, the sacrificial material layers 42 caninclude silicon nitride, and the materials of the insulating layers 32and the retro-stepped dielectric material portion 65 can be selectedfrom silicon oxide and dielectric metal oxides.

The etch process that removes the second material selective to the firstmaterial and the outermost layer of the memory films 50 can be a wetetch process employing a wet etch solution, or can be a gas phase (dry)etch process in which the etchant is introduced in a vapor phase intothe backside trenches 79. For example, if the sacrificial materiallayers 42 include silicon nitride, the etch process can be a wet etchprocess in which the exemplary structure is immersed within a wet etchtank including phosphoric acid, which etches silicon nitride selectiveto silicon oxide, silicon, and various other materials employed in theart. The support pillar structure 20, the retro-stepped dielectricmaterial portion 65, and the memory stack structures 55 providestructural support while the backside recesses 43 are present withinvolumes previously occupied by the sacrificial material layers 42.

Each backside recess 43 can be a laterally extending cavity having alateral dimension that is greater than the vertical extent of thecavity. In other words, the lateral dimension of each backside recess 43can be greater than the height of the backside recess 43. A plurality ofbackside recesses 43 can be formed in the volumes from which the secondmaterial of the sacrificial material layers 42 is removed. The memoryopenings in which the memory stack structures 55 are formed are hereinreferred to as front side openings or front side cavities in contrastwith the backside recesses 43. In one embodiment, the memory arrayregion 100 comprises an array of monolithic three-dimensional NANDstrings having a plurality of device levels disposed above the substrate(9, 10). In this case, each backside recess 43 can define a space forreceiving a respective word line of the array of monolithicthree-dimensional NAND strings.

Each of the plurality of backside recesses 43 can extend substantiallyparallel to the top surface of the substrate (9, 10). A backside recess43 can be vertically bounded by a top surface of an underlyinginsulating layer 32 and a bottom surface of an overlying insulatinglayer 32. In one embodiment, each backside recess 43 can have a uniformheight throughout.

Physically exposed surface portions of the optional pedestal channelportions 11 and the semiconductor material layer 10 can be convertedinto dielectric material portions by thermal conversion and/or plasmaconversion of the semiconductor materials into dielectric materials. Forexample, thermal conversion and/or plasma conversion can be employed toconvert a surface portion of each pedestal channel portion 11 into atubular dielectric spacer 116, and to convert each physically exposedsurface portion of the semiconductor material layer 10 into a planardielectric portion 616. In one embodiment, each tubular dielectricspacer 116 can be topologically homeomorphic to a torus, i.e., generallyring-shaped. As used herein, an element is topologically homeomorphic toa torus if the shape of the element can be continuously stretchedwithout destroying a hole or forming a new hole into the shape of atorus. The tubular dielectric spacers 116 include a dielectric materialthat includes the same semiconductor element as the pedestal channelportions 11 and additionally includes at least one non-metallic elementsuch as oxygen and/or nitrogen such that the material of the tubulardielectric spacers 116 is a dielectric material. In one embodiment, thetubular dielectric spacers 116 can include a dielectric oxide, adielectric nitride, or a dielectric oxynitride of the semiconductormaterial of the pedestal channel portions 11. Likewise, each planardielectric portion 616 includes a dielectric material that includes thesame semiconductor element as the semiconductor material layer andadditionally includes at least one non-metallic element such as oxygenand/or nitrogen such that the material of the planar dielectric portions616 is a dielectric material. In one embodiment, the planar dielectricportions 616 can include a dielectric oxide, a dielectric nitride, or adielectric oxynitride of the semiconductor material of the semiconductormaterial layer 10.

Referring to FIG. 9B, a backside blocking dielectric layer 44 can beoptionally formed. The backside blocking dielectric layer 44, ifpresent, comprises a dielectric material that functions as a controlgate dielectric for the control gates to be subsequently formed in thebackside recesses 43. In case the blocking dielectric layer 52 ispresent within each memory opening, the backside blocking dielectriclayer 44 is optional. In case the blocking dielectric layer 52 isomitted, the backside blocking dielectric layer 44 is present.

The backside blocking dielectric layer 44 can be formed in the backsiderecesses 43 and on a sidewall of the backside trench 79. The backsideblocking dielectric layer 44 can be formed directly on horizontalsurfaces of the insulating layers 32 and sidewalls of the memory stackstructures 55 within the backside recesses 43. If the backside blockingdielectric layer 44 is formed, formation of the tubular dielectricspacers 116 and the planar dielectric portion 616 prior to formation ofthe backside blocking dielectric layer 44 is optional. In oneembodiment, the backside blocking dielectric layer 44 can be formed by aconformal deposition process such as atomic layer deposition (ALD). Thebackside blocking dielectric layer 44 can consist essentially ofaluminum oxide. The thickness of the backside blocking dielectric layer44 can be in a range from 1 nm to 15 nm, such as 2 to 6 nm, althoughlesser and greater thicknesses can also be employed.

The dielectric material of the backside blocking dielectric layer 44 canbe a dielectric metal oxide such as aluminum oxide, a dielectric oxideof at least one transition metal element, a dielectric oxide of at leastone Lanthanide element, a dielectric oxide of a combination of aluminum,at least one transition metal element, and/or at least one Lanthanideelement. Alternatively or additionally, the backside blocking dielectriclayer 44 can include a silicon oxide layer. The backside blockingdielectric layer 44 can be deposited by a conformal deposition methodsuch as chemical vapor deposition or atomic layer deposition. Thebackside blocking dielectric layer 44 is formed on the sidewalls of thebackside trenches 79, horizontal surfaces and sidewalls of theinsulating layers 32, the portions of the sidewall surfaces of thememory stack structures 55 that are physically exposed to the backsiderecesses 43, and a top surface of the planar dielectric portion 616. Abackside cavity 79′ is present within the portion of each backsidetrench 79 that is not filled with the backside blocking dielectric layer44.

Referring to FIG. 9C, a diffusion barrier layer comprising amolybdenum-containing conductive liner 46A is formed conformally onphysically exposed surfaces of the backside blocking dielectric layer44. The molybdenum-containing conductive liner 46A includes a conductivematerial containing molybdenum. The molybdenum-containing conductiveliner 46A can include molybdenum as the only metallic element therein.The molybdenum-containing conductive liner 46A can include molybdenumatoms and optionally includes a non-metallic element such as nitrogenand/or carbon. The molybdenum-containing conductive liner 46A mayconsist essentially of molybdenum atoms and unavoidable impurities(i.e., a molybdenum liner), or may comprise a molybdenum-containingconductive compound or a molybdenum-containing conductive alloy, such asmolybdenum nitride, molybdenum carbide, molybdenum carbonitride, analloy of molybdenum base metal containing nitrogen and/or carbonalloying element(s) or a multi-layer stack thereof, such as a stack of amolybdenum layer and a molybdenum nitride layer located under or overthe molybdenum layer. The molybdenum-containing conductive liner 46A canhave a uniform thickness within a range from 0.5 nm to 5 nm, such asfrom 2 nm to 4 nm, although lesser and greater thicknesses can also beemployed.

The molybdenum-containing conductive liner 46A can be formed at least bythermal decomposition of a molybdenum-containing precursor gas in adeposition process such as chemical vapor deposition or atomic layerdeposition. The molybdenum-containing precursor gas can include agaseous compound of molybdenum, which may include at least one halogenatom and may optionally include at least one oxygen atom. For example,the molybdenum-containing precursor gas may include, and/or consistessentially of, MoO₂Cl₂. A carrier gas such as argon or nitrogen may beoptionally employed during the deposition process that provides themolybdenum atoms of the molybdenum-containing conductive liner 46A. Anitrogen containing precursor gas, such as ammonia, and/or a carboncontaining precursor gas, such as any suitable hydrocarbon gas, may alsobe provided to include nitrogen and/or carbon into themolybdenum-containing conductive liner 46A. Alternatively, a depositedmolybdenum layer may be exposed to a nitrogen and/or carbon containingambient to nitride and/or carbide the molybdenum layer.

The molybdenum-containing precursor can be thermally decomposed todeposit a molybdenum-containing material on physically exposed surfaces(such as the surfaces of the backside blocking dielectric layer 44) ofthe exemplary structure during the deposition process that forms themolybdenum-containing conductive liner 46A. The molybdenum-containingmaterial may be an oxide of molybdenum or metallic molybdenum dependingon the composition of the molybdenum-containing precursor gas. In casean oxide of molybdenum is deposited, such as during an atomic layerdeposition process, a reduction process can be performed intermittentlyto reduce the oxide of molybdenum into metallic molybdenum. Hydrogen gasmay be employed as a reduction agent during the reduction process. Inone embodiment, the molybdenum-containing precursor gas and hydrogen canbe alternately flowed into a processing chamber in an atomic layerdeposition process.

In one embodiment, the molybdenum-containing conductive liner 46A canconsist essentially of molybdenum, and can be formed by thermaldecomposition of the molybdenum-containing precursor gas. The thermallydecomposed material may include, and/or consist essentially of, metallicmolybdenum, or may include molybdenum oxide that is subsequentlyconverted into metallic molybdenum. In one embodiment, deposition ofmolybdenum oxide and reduction of molybdenum oxide into metallicmolybdenum may be performed layer by layer in an atomic layer depositionprocess.

In one embodiment, the molybdenum-containing conductive liner 46Acomprises, or consists essentially of, molybdenum nitride. In this case,the molybdenum-containing conductive liner is formed by deposition of amolybdenum layer and nitridation of the molybdenum layer. In this case,a metallic molybdenum layer can be formed by decomposition of a metallicmolybdenum layer employing the methods described above, and by nitridingthe metallic molybdenum layer. A nitriding agent, such as ammonia, maybe flowed into a process chamber containing the exemplary structureafter formation of a metallic molybdenum layer on the backside blockingdielectric layer 44. In one embodiment, deposition of a metallicmolybdenum layer and nitridation of the metallic molybdenum layer can beperformed monolayer by monolayer. Alternatively, a metallic molybdenumlayer may be deposited first, and the nitridation process converts theentire metallic molybdenum layer into a molybdenum nitride layer orconverts an outer surface of the molybdenum layer to molybdenum nitridein a single nitridation process. If only the outer surface is nitrided,then a stack of an inner molybdenum layer and an outer molybdenumnitride layer is formed. The atomic percentage of nitrogen atoms in themolybdenum-containing conductive liner 46A can be in a range from 1% to50%, such as from 5% to 25%. In one embodiment, themolybdenum-containing conductive liner 46A may include molybdenumnitride (e.g., Mo₂N or MoN).

In one embodiment, the molybdenum-containing conductive liner 46Acomprises, and/or consists essentially of, molybdenum carbide. In thiscase, the molybdenum-containing conductive liner 46A can be formed bysimultaneously or alternately providing a molybdenum precursor gas and acarbon precursor gas into the backside recesses 43 and inducing thermaldecomposition thereof. Exemplary carbon precursor gases includeacetylene, ethylene, ethane, methane, propyne, propene, propane, etc. Incase the decomposition product of the molybdenum-containing conductiveliner 46A includes an oxide of molybdenum, an optional reduction processcan be performed to convert the oxide of molybdenum into metallicmolybdenum, and the carbon precursor gas can be flowed and decomposed ina process chamber containing the exemplary structure. Alternatively, themolybdenum oxide may be carburized to form molybdenum carbide without anintermediate reduction step. Deposition of a metallic molybdenum layerand addition of carbon may be repeated multiple times to form themolybdenum-containing conductive liner. The atomic percentage of carbonatoms in the molybdenum-containing conductive liner 46A can be in arange from 1% to 50%, such as from 5% to 25%. In one embodiment, themolybdenum-containing conductive liner 46A may include molybdenumcarbide (e.g., Mo₂C) or molybdenum monocarbide (e.g., MoC).

In one embodiment, a combination of different deposition processesdescribed above may be employed to form the molybdenum-containingconductive liner 46A. In this case, the molybdenum-containing conductiveliner 46A comprises, and/or consists essentially of, a layer stackincluding a molybdenum layer consisting essentially of molybdenum and amolybdenum compound layer including a molybdenum compound selected frommolybdenum nitride and/or molybdenum carbide.

Generally, the molybdenum-containing conductive liner 46A includes aconductive material that can provide low resistivity at a smallthickness such as a thickness less than 6 nm. Molybdenum can providebulk resistivity of about 5.3×microohm-cm, which is comparable to thebulk resistivity of tungsten (which is 5.3×microohm-cm), and is lowerthan the bulk resistivity of cobalt, ruthenium, or nickel. Further,molybdenum can be nucleated directly on dielectric oxide surfaces, suchas a surface of aluminum oxide. Thus, the molybdenum-containingconductive liner 46A can be deposited directly on the backside blockingdielectric layer 44 without formation of a nucleation layer formed bydecomposition of a hydride of a non-metallic material (such as silane,germane, or diborane). By avoiding incorporation of non-metallicelements such as silicon, germanium, or boron into themolybdenum-containing conductive liner 46A during formation of themolybdenum-containing conductive liner 46A, the molybdenum-containingconductive liner 46A can provide low resistivity.

While molybdenum in metallic form may be deposited after formation ofthe molybdenum-containing conductive liner 46A on the backside blockingdielectric layer 44, the high cost of molybdenum-containing precursorgases makes it preferable to employ a different metal to fill remainingvolumes of the backside recesses after deposition of themolybdenum-containing conductive liner 46A up to the target thickness,which can be in a range from 1 nm to 6 nm.

Referring to FIGS. 9D, 10A, and 10B, a metal fill material is depositedin the plurality of backside recesses 43, on the sidewalls of the atleast one the backside trench 79, and over the top surface of thecontact level dielectric layer 73 to form a metal fill portion 46B. Themetallic fill material can be deposited by a conformal depositionmethod, which can be, for example, chemical vapor deposition (CVD),atomic layer deposition (ALD), electroless plating, electroplating, or acombination thereof. In one embodiment, the metal fill portion 46B canconsist essentially of at least one elemental metal. In one embodiment,the at least one elemental metal of the metal fill portion 46B includesat least one elemental metal other than molybdenum. In this case, eachmetal fill portion 46B can consist essentially of at least one elementalmetal other than molybdenum. The at least one elemental metal of themetal fill portion 46B can be selected, for example, from tungsten,cobalt, ruthenium, copper, titanium, and tantalum. In one embodiment,the metal fill portion 46B can consist essentially of a single elementalmetal.

In one embodiment, the metal fill portion 46B can be deposited employinga fluorine-containing precursor gas, such as WF₆, directly on themolybdenum-containing conductive liner 46A, without formation of atungsten nucleation layer formed by decomposition of a hydride of anon-metallic material (such as silane, germane, or diborane). In oneembodiment, the metal fill portion 46B can be a tungsten layer includinga residual level of fluorine atoms as impurities. The metal fill portion46B is spaced from the insulating layers 32 and the memory stackstructures 55 by the molybdenum-containing conductive liner 46A, whichis an electrically conductive diffusion barrier layer that blocksdiffusion of fluorine atoms therethrough. The metal fill portion 46B canbe formed in polycrystalline form with an average grain size that is onethe order of one half of the height of each cavity that the metal fillportion 46B fills. Grains 46G and optional seam 46S of the metal fillportion 46B are illustrated in FIG. 10B.

A plurality of electrically conductive layers 46 can be formed in theplurality of backside recesses 43, and a continuous electricallyconductive material layer 46L can be formed on the sidewalls of eachbackside trench 79 and over the contact level dielectric layer 73. Eachelectrically conductive layer 46 includes a portion of themolybdenum-containing conductive liner 46A and a portion of the metalfill portion 46B that are located between a vertically neighboring pairof dielectric material layers such as a pair of insulating layers 32.The continuous electrically conductive material layer 46L includes acontinuous portion of the molybdenum-containing conductive liner 46A anda continuous portion of the metal fill portion 46B that are located inthe backside trenches 79 or above the contact level dielectric layer 73.

Each sacrificial material layer 42 can be replaced with an electricallyconductive layer 46. A backside cavity 79′ is present in the portion ofeach backside trench 79 that is not filled with the backside blockingdielectric layer 44 and the continuous electrically conductive materiallayer 46L. A tubular dielectric spacer 116 laterally surrounds apedestal channel portion 11. A bottommost electrically conductive layer46 laterally surrounds each tubular dielectric spacer 116 upon formationof the electrically conductive layers 46.

Referring to FIGS. 11A-11D, the deposited metallic material of thecontinuous electrically conductive material layer 46L is etched backfrom the sidewalls of each backside trench 79 and from above the contactlevel dielectric layer 73, for example, by an isotropic wet etch, ananisotropic dry etch, or a combination thereof. Each remaining portionof the deposited metallic material in the backside recesses 43constitutes an electrically conductive layer 46. Each electricallyconductive layer 46 can be a conductive line structure. Thus, thesacrificial material layers 42 are replaced with the electricallyconductive layers 46.

Each electrically conductive layer 46 can function as a combination of aplurality of control gate electrodes located at a same level and a wordline electrically interconnecting, i.e., electrically shorting, theplurality of control gate electrodes located at the same level. Theplurality of control gate electrodes within each electrically conductivelayer 46 are the control gate electrodes for the vertical memory devicesincluding the memory stack structures 55. In other words, eachelectrically conductive layer 46 can be a word line that functions as acommon control gate electrode for the plurality of vertical memorydevices.

In one embodiment, the removal of the continuous electrically conductivematerial layer 46L can be selective to the material of the backsideblocking dielectric layer 44. In this case, a horizontal portion of thebackside blocking dielectric layer 44 can be present at the bottom ofeach backside trench 79. In another embodiment, the removal of thecontinuous electrically conductive material layer 46L may not beselective to the material of the backside blocking dielectric layer 44or, the backside blocking dielectric layer 44 may not be employed. Theplanar dielectric portions 616 can be removed during removal of thecontinuous electrically conductive material layer 46L. A backside cavity79′ is present within each backside trench 79.

Referring to FIGS. 12A and 12B, an insulating material layer can beformed in the backside trenches 79 and over the contact level dielectriclayer 73 by a conformal deposition process. Exemplary conformaldeposition processes include, but are not limited to, chemical vapordeposition and atomic layer deposition. The insulating material layerincludes an insulating material such as silicon oxide, silicon nitride,a dielectric metal oxide, an organosilicate glass, or a combinationthereof. In one embodiment, the insulating material layer can includesilicon oxide. The insulating material layer can be formed, for example,by low pressure chemical vapor deposition (LPCVD) or atomic layerdeposition (ALD). The thickness of the insulating material layer can bein a range from 1.5 nm to 60 nm, although lesser and greater thicknessescan also be employed.

If a backside blocking dielectric layer 44 is present, the insulatingmaterial layer can be formed directly on surfaces of the backsideblocking dielectric layer 44 and directly on the sidewalls of theelectrically conductive layers 46. If a backside blocking dielectriclayer 44 is not employed, the insulating material layer can be formeddirectly on sidewalls of the insulating layers 32 and directly onsidewalls of the electrically conductive layers 46.

An anisotropic etch is performed to remove horizontal portions of theinsulating material layer from above the contact level dielectric layer73 and at the bottom of each backside trench 79. Each remaining portionof the insulating material layer constitutes an insulating spacer 74. Abackside cavity 79′ is present within a volume surrounded by eachinsulating spacer 74. A top surface of the semiconductor material layer10 can be physically exposed at the bottom of each backside trench 79.

A source region 61 can be formed at a surface portion of thesemiconductor material layer 10 under each backside cavity 79′ byimplantation of electrical dopants into physically exposed surfaceportions of the semiconductor material layer 10. Each source region 61is formed in a surface portion of the substrate (9, 10) that underlies arespective opening through the insulating spacer 74. Due to the straggleof the implanted dopant atoms during the implantation process andlateral diffusion of the implanted dopant atoms during a subsequentactivation anneal process, each source region 61 can have a lateralextent greater than the lateral extent of the opening through theinsulating spacer 74.

An upper portion of the semiconductor material layer 10 that extendsbetween the source region 61 and the plurality of pedestal channelportions 11 constitutes a horizontal semiconductor channel 59 for aplurality of field effect transistors. The horizontal semiconductorchannel 59 is connected to multiple vertical semiconductor channels 60through respective pedestal channel portions 11. The horizontalsemiconductor channel 59 contacts the source region 61 and the pluralityof pedestal channel portions 11. A bottommost electrically conductivelayer 46 provided upon formation of the electrically conductive layers46 within the alternating stack (32, 46) can comprise a select gateelectrode for the field effect transistors. Each source region 61 isformed in an upper portion of the substrate (9, 10). Semiconductorchannels (59, 11, 60) extend between each source region 61 and arespective set of drain regions 63. The semiconductor channels (59, 11,60) include the vertical semiconductor channels 60 of the memory stackstructures 55.

A backside contact via structure 76 can be formed within each backsidecavity 79′. Each contact via structure 76 can fill a respective backsidecavity 79′. The contact via structures 76 can be formed by depositing atleast one conductive material in the remaining unfilled volume (i.e.,the backside cavity 79′) of the backside trench 79. For example, the atleast one conductive material can include a conductive liner 76A and aconductive fill material portion 76B. The conductive liner 76A caninclude a conductive metallic liner such as TiN, TaN, WN, TiC, TaC, WC,an alloy thereof, or a stack thereof. The thickness of the conductiveliner 76A can be in a range from 3 nm to 30 nm, although lesser andgreater thicknesses can also be employed. The conductive fill materialportion 76B can include a metal or a metallic alloy. For example, theconductive fill material portion 76B can include W, Cu, Al, Co, Ru, Ni,an alloy thereof, or a stack thereof.

The at least one conductive material can be planarized employing thecontact level dielectric layer 73 overlying the alternating stack (32,46) as a stopping layer. If chemical mechanical planarization (CMP)process is employed, the contact level dielectric layer 73 can beemployed as a CMP stopping layer. Each remaining continuous portion ofthe at least one conductive material in the backside trenches 79constitutes a backside contact via structure 76.

The backside contact via structure 76 extends through the alternatingstack (32, 46), and contacts a top surface of the source region 61. If abackside blocking dielectric layer 44 is employed, the backside contactvia structure 76 can contact a sidewall of the backside blockingdielectric layer 44.

Referring to FIGS. 13A and 13B, additional contact via structures (88,86, 8P) can be formed through the contact level dielectric layer 73, andoptionally through the retro-stepped dielectric material portion 65. Forexample, drain contact via structures 88 can be formed through thecontact level dielectric layer 73 on each drain region 63. Word linecontact via structures 86 can be formed on the electrically conductivelayers 46 through the contact level dielectric layer 73, and through theretro-stepped dielectric material portion 65. Peripheral device contactvia structures 8P can be formed through the retro-stepped dielectricmaterial portion 65 directly on respective nodes of the peripheraldevices.

Referring to FIG. 14, a simulation result is shown for the dependence ofthe threshold voltage for programming operations and erasing operationson the gate bias voltage. Curve 1410 represents the dependence of thethreshold voltage for a three-dimensional NAND string containing acombination of a TiN liner and a tungsten fill layer for eachelectrically conductive layer that functions as a word line. Curve 1420represents the dependence of the threshold voltage for athree-dimensional NAND string containing a combination of a TiN liner, ametallic molybdenum liner, and a tungsten fill layer for eachelectrically conductive layer that functions as a word line. Curve 1430represents the dependence of the threshold voltage for athree-dimensional NAND string containing a metallic molybdenum liner anda tungsten fill layer for each electrically conductive layer thatfunctions as a word line according to an embodiment of the presentdisclosure. A programming window increase represented by the length ofthe arrow between curve 1410 and curve 1430 can be obtained by using themetallic molybdenum liner as the molybdenum-containing conductive liner46A of the embodiment of the present disclosure between a backsideblocking dielectric layer 44 and a metal fill portion 46B including atungsten fill layer. An improvement over a structure employing acombination of a TiN liner and a metallic molybdenum liner can also beobtained by the embodiment of the exemplary structure containing themetallic molybdenum liner as the molybdenum-containing conductive liner46A of the embodiment of the present disclosure as indicated by a gapbetween curve 1430 and curve 1420 at the high end of the gate biasvoltage range.

Referring to all drawings and according to various embodiments of thepresent disclosure, a three-dimensional memory device is provided, whichcomprises: an alternating stack of insulating layers 32 and electricallyconductive layers 46 located over a substrate (9, 10), wherein each ofthe electrically conductive layers 46 comprise a molybdenum-containingconductive liner 46A and a metal fill portion 46B comprising a metalother than molybdenum, and memory stack structures 55 extending throughthe alternating stack (32, 46), wherein each of the memory stackstructures 55 comprises a memory film 50 and a vertical semiconductorchannel 60. The molybdenum-containing conductive liner is locateddirectly on a blocking dielectric layer, such as the backside blockingdielectric layer 44.

In one embodiment, the molybdenum-containing conductive liner 46Aconsists essentially of molybdenum. In another embodiment, themolybdenum-containing conductive liner 46A comprises, and/or consistsessentially of, a material selected from molybdenum nitride ormolybdenum carbide. In another embodiment, the molybdenum-containingconductive liner 46A comprises, and/or consists essentially of, a layerstack including a molybdenum layer consisting essentially of molybdenumand a molybdenum compound layer including a molybdenum compound selectedfrom molybdenum nitride or molybdenum carbide.

In one embodiment, the molybdenum-containing conductive liner 46A has auniform thickness within a range from 0.5 nm to 5 nm.

In one embodiment, the metal fill portion 46B consists essentially ofthe metal other than molybdenum. In one embodiment, the metal fillportion 46B consists essentially of an elemental metal selected fromtungsten, cobalt, ruthenium, and copper.

In one embodiment, the backside blocking dielectric layer 44 is locatedbetween each of the electrically conductive layers 46 and each of thememory stack structures 55. In one embodiment, the backside blockingdielectric layer 44 comprises, and/or consists essentially of, adielectric metal oxide material, such as aluminum oxide, and the metalfill portion 46B consists essentially of tungsten.

According to another embodiment, a three-dimensional memory devicecomprises an alternating stack of insulating layers 32 and electricallyconductive layers 46 located over a substrate (9, 10), wherein each ofthe electrically conductive layers 46 comprises a conductive liner 46Acontaining molybdenum and at least one of nitrogen or carbon, and ametal fill portion 46B comprising a metal other than molybdenum, andmemory stack structures 55 extending through the alternating stack,wherein each of the memory stack structures comprises a memory film 50and a vertical semiconductor channel 60. As described above, theconductive liner 46A containing molybdenum and at least one of nitrogenor carbon may comprise a compound of molybdenum and nitrogen and/orcarbon, such as molybdenum nitride and/or molybdenum carbide, or analloy of molybdenum base metal containing nitrogen and/or carbonalloying element.

In one embodiment, the three-dimensional memory device comprises athree-dimensional NAND memory device and the electrically conductivelayers 46 comprise word lines of the three-dimensional NAND memorydevice. The alternating stack (32, 46) comprises a terrace region inwhich each electrically conductive layer 46 other than a topmostelectrically conductive layer 46 within the alternating stack (32, 46)laterally extends farther than any overlying electrically conductivelayer 46 within the alternating stack (32, 46). The terrace regionincludes stepped surfaces of the alternating stack (32, 46) thatcontinuously extend from a bottommost layer within the alternating stack(32, 46) to a topmost layer within the alternating stack (32, 46).Support pillar structures 20 can extend through the stepped surfaces andthrough a retro-stepped dielectric material portion 65 that overlies thestepped surfaces.

The exemplary structures can include a three-dimensional memory device.In one embodiment, the three-dimensional memory device comprises amonolithic three-dimensional NAND memory device. The electricallyconductive layers 46 can comprise, or can be electrically connected to,a respective word line of the monolithic three-dimensional NAND memorydevice. The substrate (9, 10) can comprise a silicon substrate. Thevertical NAND memory device can comprise an array of monolithicthree-dimensional NAND strings over the silicon substrate. At least onememory cell (comprising a portion of a charge storage layer 54 at alevel of an electrically conductive layer 46) in a first device level ofthe array of monolithic three-dimensional NAND strings can be locatedover another memory cell (comprising another portion of the chargestorage layer 54 at a level of another electrically conductive layer 46)in a second device level of the array of monolithic three-dimensionalNAND strings. The silicon substrate can contain an integrated circuitcomprising a driver circuit (comprising the least one semiconductordevice 700) for the memory device located thereon. The electricallyconductive layers 46 can comprise a plurality of control gate electrodeshaving a strip shape extending substantially parallel to the top surfaceof the substrate (9, 10), e.g., between a pair of backside trenches 79.The plurality of control gate electrodes comprises at least a firstcontrol gate electrode located in a first device level and a secondcontrol gate electrode located in a second device level. The array ofmonolithic three-dimensional NAND strings can comprise: a plurality ofsemiconductor channels (59, 11, 60), wherein at least one end portion 60of each of the plurality of semiconductor channels (59, 11, 60) extendssubstantially perpendicular to a top surface of the substrate (9, 10)and comprising a respective one of the vertical semiconductor channels60; and a plurality of charge storage elements (comprising portions ofthe memory films 50, i.e., portions of the charge storage layer 54).Each charge storage element can be located adjacent to a respective oneof the plurality of semiconductor channels (59, 11, 60).

The various embodiments of the present disclosure provide amolybdenum-containing conductive liner (e.g., diffusion barrier layer)that may be used to directly nucleate a metallic material, such astungsten. The liner may be relatively thin (e.g., 0.5 to 5 nm) to reducethe device dimensions. Thus, the amount of the relatively expensivemolybdenum-containing precursor gas used to deposit the liner isrelatively small, thus reducing the cost of the process. Furthermore,the molybdenum-containing conductive liner has a lower resistivity thantitanium nitride to reduce the word line resistivity, and also has animproved continuity at the small thicknesses compared to titaniumnitride to provide a more effective fluorine diffusion barrier.

Although the foregoing refers to particular preferred embodiments, itwill be understood that the disclosure is not so limited. It will occurto those of ordinary skill in the art that various modifications may bemade to the disclosed embodiments and that such modifications areintended to be within the scope of the disclosure. Compatibility ispresumed among all embodiments that are not alternatives of one another.The word “comprise” or “include” contemplates all embodiments in whichthe word “consist essentially of” or the word “consists of” replaces theword “comprise” or “include,” unless explicitly stated otherwise. Wherean embodiment employing a particular structure and/or configuration isillustrated in the present disclosure, it is understood that the presentdisclosure may be practiced with any other compatible structures and/orconfigurations that are functionally equivalent provided that suchsubstitutions are not explicitly forbidden or otherwise known to beimpossible to one of ordinary skill in the art. All of the publications,patent applications and patents cited herein are incorporated herein byreference in their entirety.

1. A three-dimensional memory device comprising: an alternating stack ofinsulating layers and electrically conductive layers located over asubstrate, wherein each of the electrically conductive layers comprisesa molybdenum-containing conductive liner and a metal fill portioncomprising a metal other than molybdenum; and memory stack structuresextending through the alternating stack, wherein each of the memorystack structures comprises a memory film and a vertical semiconductorchannel; wherein the molybdenum-containing conductive liner is locateddirectly on a blocking dielectric layer; and wherein themolybdenum-containing conductive liner has a thickness of 0.5 nm to 5nm.
 2. The three-dimensional memory device of claim 1, wherein themolybdenum-containing conductive liner consists essentially ofmolybdenum.
 3. The three-dimensional memory device of claim 1, whereinthe molybdenum-containing conductive liner comprises a material selectedfrom molybdenum nitride or molybdenum carbide.
 4. The three-dimensionalmemory device of claim 1, wherein the molybdenum-containing conductiveliner comprises a layer stack including a molybdenum layer consistingessentially of molybdenum and a molybdenum compound layer including amolybdenum compound selected from molybdenum nitride or molybdenumcarbide.
 5. (canceled)
 6. The three-dimensional memory device of claim1, wherein the metal fill portion consists essentially of the metalother than molybdenum.
 7. The three-dimensional memory device of claim6, wherein the metal fill portion consists essentially of an elementalmetal selected from tungsten, cobalt, ruthenium, or copper.
 8. Thethree-dimensional memory device of claim 1, wherein the blockingdielectric layer is located between each of the electrically conductivelayers and each of the memory stack structures.
 9. The three-dimensionalmemory device of claim 8, wherein the blocking dielectric layercomprises aluminum oxide, and wherein the metal fill portion consistsessentially of tungsten.
 10. The three-dimensional memory device ofclaim 1, wherein: the three-dimensional memory device comprises athree-dimensional NAND memory device; the electrically conductive layerscomprise word lines of the three-dimensional NAND memory device; thealternating stack comprises a terrace region in which each electricallyconductive layer other than a topmost electrically conductive layerwithin the alternating stack laterally extends farther than anyoverlying electrically conductive layer within the alternating stack;the terrace region includes stepped surfaces of the alternating stackthat continuously extend from a bottommost layer within the alternatingstack to a topmost layer within the alternating stack; and supportpillar structures extend through the stepped surfaces and through aretro-stepped dielectric material portion that overlies the steppedsurfaces.
 11. (canceled)
 12. A method of forming a three-dimensionalmemory device, comprising: forming an alternating stack of insulatinglayers and sacrificial material layers over a substrate; forming memorystack structures through the alternating stack, wherein each of thememory stack structures comprises a memory film and a verticalsemiconductor channel; forming backside recesses by removing thesacrificial material layers selective to the insulating layers and thememory stack structures; forming a backside blocking dielectric layer inthe backside recesses; and forming electrically conductive layers in thebackside recesses, wherein each of the electrically conductive layerscomprise a molybdenum-containing conductive liner formed directly on thebackside blocking dielectric layer, and a metal fill portion comprisinga metal other than molybdenum.
 13. The method of claim 12, wherein themolybdenum-containing conductive liner consists essentially ofmolybdenum.
 14. The method of claim 12, wherein: themolybdenum-containing conductive liner comprises molybdenum nitride; andthe molybdenum-containing conductive liner is formed by deposition of amolybdenum layer and nitridation of the molybdenum layer.
 15. The methodof claim 12, wherein: the molybdenum-containing conductive linercomprises molybdenum carbide; and the molybdenum-containing conductiveliner is formed by simultaneously or alternately providing a molybdenumprecursor gas and a carbon precursor gas into the backside recesses andinducing thermal decomposition thereof.
 16. The method of claim 12,wherein the molybdenum-containing conductive liner comprises a layerstack including a molybdenum layer consisting essentially of molybdenumand a molybdenum compound layer including a molybdenum compound selectedfrom molybdenum nitride or carbon-doped molybdenum.
 17. The method ofclaim 12, wherein the molybdenum-containing conductive liner has athickness of 0.5 nm to 5 nm.
 18. The method of claim 12, wherein formingthe molybdenum-containing conductive liner comprises inducing thermaldecomposition of MoO₂Cl₂ within the backside recesses.
 19. The method ofclaim 12, wherein the metal fill portion consists essentially oftungsten.
 20. The method of claim 12, further comprising: forming aterrace region in the alternating stack, wherein the terrace regionincludes stepped surfaces of the alternating stack that continuouslyextend from a bottommost layer within the alternating stack to a topmostlayer within the alternating stack; forming a retro-stepped dielectricmaterial portion over the stepped surfaces; and forming support pillarstructures through the retro-stepped dielectric material portion andthrough the stepped surfaces.
 21. A three-dimensional memory devicecomprising: an alternating stack of insulating layers and electricallyconductive layers located over a substrate, wherein each of theelectrically conductive layers comprises a molybdenum-containingconductive liner and a metal fill portion comprising a metal other thanmolybdenum; and memory stack structures extending through thealternating stack, wherein each of the memory stack structures comprisesa memory film and a vertical semiconductor channel; wherein: themolybdenum-containing conductive liner is located directly on a blockingdielectric layer; the three-dimensional memory device comprises athree-dimensional NAND memory device; the electrically conductive layerscomprise word lines of the three-dimensional NAND memory device; thealternating stack comprises a terrace region in which each electricallyconductive layer other than a topmost electrically conductive layerwithin the alternating stack laterally extends farther than anyoverlying electrically conductive layer within the alternating stack;the terrace region includes stepped surfaces of the alternating stackthat continuously extend from a bottommost layer within the alternatingstack to a topmost layer within the alternating stack; and supportpillar structures extend through the stepped surfaces and through aretro-stepped dielectric material portion that overlies the steppedsurfaces